MBE Growth of High Electron Mobility InP Epilayers
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2005
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Resumo |
The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0-7.0) and growth rate (0.437 and 0. 791μm/h). Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/(V · s) and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃. The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0-7.0) and growth rate (0.437 and 0. 791μm/h). Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/(V · s) and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃. 于2010-11-23批量导入 zhangdi于2010-11-23 13:04:17导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:04:17Z (GMT). No. of bitstreams: 1 4437.pdf: 222839 bytes, checksum: b1111e009366285a19229a87535bc3fe (MD5) Previous issue date: 2005 国家自然科学基金资助项目 Nankai University;中科院半导体所 国家自然科学基金资助项目 |
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Idioma(s) |
英语 |
Fonte |
Su Yongchun;Yao Jianghong;Lin Yaowang;Xing Xiaodong;Pi Biao;Xu Bo;Wang Zhanguo;Xu Jingjun.MBE Growth of High Electron Mobility InP Epilayers,半导体学报,2005,26(8):1485-1488 |
Palavras-Chave | #半导体材料 |
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期刊论文 |