Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

于2010-11-23批量导入

zhangdi于2010-11-23 13:05:35导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:05:35Z (GMT). No. of bitstreams: 1 4627.pdf: 205457 bytes, checksum: a685f29cbdfb3bae6b78921692eefb0c (MD5) Previous issue date: 2004

Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences