1.55μm Fabry-Perot Thermo-Optical Tunable Filter with amorphous-Si as Cavity

A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

镜面起伏对1.55 μm Si基MEMS光滤波器的影响

用传输矩阵方法，在简化的光学模型基础上，分别讨论了分布式Bragg反射镜DBR（Distributed Bragg Reflector）的生长精度及镜面起伏对1.55 μm Si基MEMS（Micro-Electro-Mechanical-System）可调谐光滤波器透射谱的影响。计算表明

1.55μm波长发光的自组织InAs量子点生长

通过引入较长停顿时间，采用分子束外延循环生长方法在350℃低温获得了一种横向聚合的InAs自组织量子点，在荧光光谱中观察到1.55μm波长的发光峰。通过AFM和PL谱的联合研究，表明此低温循环生长方法有利于在长波长发光的量子点的形成。

1.55μm InGaAsP-MQW自对准压缩台面高速DBF激光器

采用一种自对准压缩台面结构制作高速1.55μm DFB激光器。激光器的典型阈值为12mA，单面斜率效率达0.157mW/mA，出光功率大于20mW。由于采用窄条p-InP作为电流阻挡层，因此激光器的寄生电容可降至2.5pF，-3DB调制带宽可达9.1GHz。

多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究

测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱，同时观察到来自浸润层和量子点的发光，首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过程

不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱

在15K测量了不同尺寸分布的In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压我致发光，静压范围为0--1.3GPa。常压下观察到三个发光峰，分别来源于不同尺寸的量子点(横向直径分别为26、52和62nm)的发光。它产的压力系数分别为82、94和98meV/GPa,都小于In_(0.55)Al_(0.45)As体材料带边的压力系数，特别是尺寸为26nm的小量子点比In_(0.55)Al_(0.45)As体材料带边小17%，并且压力系数随量子点尺寸的变小而减小。理论计算表明有效质量的增在和Γ-X混合是量子点压力系数变小的主要原因，并得到横向直径为26和52nm的小量子点的Γ－X混合势为15和10meV。根据实验还确定In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点系统X能带具有Ⅱ类结构，并且估算出价带不连续量为0.15±0.02。

半绝缘InP的优化生长条件以及掩埋的1.55μm激光器

于2010-11-23批量导入

Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm

国家863计划

1.55μm InGaAsP/InP DH激光器中的0.95μm发光带与Auger复合

于2010-11-23批量导入

High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

5×5阵列PHOSWICH闪烁探测器望远镜

描述了一个 5× 5阵列带电粒子 PHOSWICH闪烁探测器望远镜结构。它的每一个单元由 1片厚度为 1mm,面积为 2 4 mm× 2 4 mm快塑料闪烁体 NE10 2 A和 1个前表面为 2 4 mm× 2 4 mm,后表面为 37mm×37mm,厚度为 4 0 mm的 Cs I( Tl)晶体组成的。在兰州放射性离子次级束流线 ( RIBL L )上测试到 Z/ΔZ =2 0

Effect of 80.55 MeV/u(12)C(6+) ions on radiosensitivity and cell cycle of human hepatoma cell lines

In this paper, the relationship between radiosensitivity, cell cycle alteration and the change of apoptosis in different human hepatoma cell lines irradiated by heavy ions were studied with the aim of building up the base data for clinical therapy. Exponentially growing hepatoma cell lines were irradiated by 80.55 MeV/u(12)C(6+) ions at a dose of 0 Gy, 0.5 Gy, 1 Gy, 2 Gy, 4 Gy and 8 Gy. The radiosensitivity was assessed by means of the colony-forming assay. The DNA content, the percentage of each cell-cycle phase and the apoptosis rate were obtained with flow cytometry methods. After the irradiation, the SF2 (survival fraction at 2 gray) of SMMC-7721 cells were evidently lower than that of HepG2 cells. The S phase arrest, G2/M phase arrest delay and the apoptosis in the two hepatoma cell lines varied with the increase of the dose and repair time. The heavy ions could obviously kill the human hepatoma cell lines. Compared to HepG2 cells, SMMC-7721 cells were more radiosensitive to C-12(6+) ions.

Electrochemiluminescence sensor using tris(2,2 '-bipyridyl)ruthenium(II) immobilized in Eastman-AQ55D-silica composite thin-films

An electrochemiluminescence (ECL) sensor with good long-term stability and fast response time has been developed. The sensor was based on the immobilization of tris(2,2'-bipyridyl)ruthenium(II) (Ru(bpy)(3)(2+)) into the Eastman-AQ55D-silica composite thin films on a glassy carbon electrode. The ECL and electrochemistry of Ru(bpy)(3)(2+) immobilized in the composite thin films have been investigated, and the modified electrode was used for the ECL detection of oxalate, tripropylamine (TPA) and chlorpromazine (CPZ) in a flow injection analysis system and showed high sensitivity. Because of the strong electrostatic interaction and low hydrophobicity of Eastman-AQ55D, the sensor showed no loss of response over 2 months of dry storage. In use, the electrode showed only a 5% decrease in response over 100 potential cycles. The detection limit was 1 mumol l(-1) for oxalate and 0.1 mumol l(-1) for both TPA and CPZ (S/N = 3), respectively. The linear range extended from 50 mumol l(-1) to 5 mmol l(-1) for oxalate, from 20 mumol l(-1) to 1 mmol l(-1) for TPA, and from 1 mumol l(-1) to 200 mumol l(-1) for CPZ.