High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
| Data(s) |
1998
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| Resumo |
High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained. High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:21Z (GMT). No. of bitstreams: 1 3043.pdf: 193648 bytes, checksum: d8061b952f1caf2fdb7f81a30abfdcb7 (MD5) Previous issue date: 1998 SPIE.; COS.; COEMA. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE.; COS.; COEMA. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH .High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method .见：SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR LASERS III, 3547,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,8-11 |
| Palavras-Chave | #半导体物理 #InGaAsP #strained layer quantum well #laser diode #MOCVD |
| Tipo |
会议论文 |
