杂质在Pd硅化物形成时的行为

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP Based PD/EAM Integrated Photonic Switch

A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

A simulation model of body contact structure in PD SOI analogue circuit

As a solution of accurate simulation of the body effect in PD SOI analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. Based on this model, we have designed and simulated a sense amplifier that applied to V a 0.8um PD SOI 64K SRAM.

贵金属（Au, Ag, Pt, Pd）纳米材料的可控合成及性能研究

功能化的贵金属纳米材料的设计和可控制备在材料科学研究领域引起了人们广泛的关注。贵金属纳米材料的光学、电学、磁学和催化等物理和化学性质不但与其大小有关，而且还与其形貌息息相关。因此寻求简单而有效的低温溶液合成途径以实现对贵金属纳米材料的尺寸和形貌控制尤为重要。本论文的主要研究内容可以归纳如下： (1)在水溶液中利用种子生长方法分别制备了核壳Au-Pd/Pt三金属复合纳米粒子和三层的核壳AuAg复合纳米粒子。这些纳米粒子的尺寸和组成可以通过改变金种子的加入量来加以调控。 (2)通过种子生长和取代沉积相结合的方法制备了具有金核铂/银双金属壳的铃铛状纳米粒子。通过扫描电子显微镜、透射电子显微镜和X-射线光电子能谱对所得纳米粒子的尺寸、结构和组成进行了表征。 (3)以二肽甘氨酰甘氨酸作为模板合成了具有[111]取向的单晶银纳米片。通过改变实验条件探讨了片状银纳米结构的形成机理。片状银纳米结构的产率可达到80%，反应物之间的摩尔比对产物的尺寸和形貌有至关重要的作用。 (4)将K3[Fe(CN)6]和Na2S2O3的混合溶液进行水热处理，得到了具有立方体形貌的FeIIIFeIII(CN)6（柏林绿）微晶。实验结果显示K3[Fe(CN)6]和Na2S2O3的摩尔比及其浓度对所得产物的尺寸、形貌和组成有决定性的作用。 (5)在室温下通过混合3, 3', 5, 5'-四甲基联苯胺和氯铂酸，成功合成了有机-无机杂化的纳米纤维。纳米纤维的尺寸和形状可以通过改变反应物的比和浓度加以控制。基于不同的实验结果，提出了纳米纤维的可能形成机理。

GaAs中过渡族杂质Pd和Zr有关的深中心

采用结谱、光荧光等技术对Pd和Zt在GaAs中的光学和电学性质进行了研究.在GaAs:Pd中观测到三个能级,分别位于导带下0.4eV、0.60eV和价带上0.69eV.在GaAs:Zr中也观测到三个能级,分别位于导带下0.43eV和介带上0.32eV和0.55eV.基于深中心所表现出的Poole-Frenkel效应,讨论了一些中心对应的荷电态,对它们的俘获和对光致发光的影响也作了研究,结果表明:Pd和Zr在GaAs中均不是有效的复合中心.

GaAs中4d过渡杂质Mo与Pd的光电行为

4d过渡杂质Mo、Pd在GaAs中分别引入E（0．42eV）、H（0．61eV）和E（0．66eV）、H（0．69eV）等能级。根据过渡杂质Mo和Pd在GaAs中的光电行为, 推测这些杂质在GaAs中不起有效复合中心的作用。图4参3

Pd/c-Si界面反应研究

于2010-11-23批量导入

Pd/a-Si∶H界面反应研究

中科院基金

硅中Pd-B络合物性质的理论研究

于2010-11-23批量导入