A POSSIBLE MODEL - PHOTOTHERMAL EXCITATION VIA AN EXCITED-STATE IN THE SI-PD LEVEL

Autoria(s): FU J; WANG ZG; WAN SK; LIN LY
Data(s)

1988
Identificador

http://ir.semi.ac.cn/handle/172111/14539

http://www.irgrid.ac.cn/handle/1471x/101304
Idioma(s)

英语
Fonte

FU J; WANG ZG; WAN SK; LIN LY.A POSSIBLE MODEL - PHOTOTHERMAL EXCITATION VIA AN EXCITED-STATE IN THE SI-PD LEVEL,JOURNAL OF APPLIED PHYSICS,1988,64(10):5266-5269
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital