A STUDY OF THE DEEP LEVELS IN SI-PD


Autoria(s): RUAN SY; ZHOU J; ZHANG YH; JI XJ; ZHENG BR; LI SY; YANG XQ; TAN F
Data(s)

1985

Identificador

http://ir.semi.ac.cn/handle/172111/14737

http://www.irgrid.ac.cn/handle/1471x/101403

Idioma(s)

英语

Fonte

RUAN SY; ZHOU J; ZHANG YH; JI XJ; ZHENG BR; LI SY; YANG XQ; TAN F.A STUDY OF THE DEEP LEVELS IN SI-PD,CHINESE PHYSICS,1985,5(1):223-231

Palavras-Chave #半导体物理
Tipo

期刊论文