On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J
| Data(s) |
2007
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| Resumo |
We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained. We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 SPIE.; Chinese Opt Soc.; China Inst Commun.; Peoples Govt Wuhan Municipal. [Shou-Li, Zhou; Ya-li, In] Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China; [De-ping, Xiong] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510016, Guangdong, Peoples R China; [Hai-lin, Cui; Yin-zhe, Chong; Ang, Miao; Ji-he, Lv] Beijing Univ Posts & Telecommun, Sch Telecommun Engn, Beijing 100876, Peoples R China; [Jun-hua, Gao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc.; China Inst Commun.; Peoples Govt Wuhan Municipal. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Shou-Li, Z ; De-Ping, X ; Ya-Li, I ; Hai-Lin, C ; Yin-Zhe, C ; Ang, M ; Ji-He, L ; Jun-Hua, G .On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J .见：SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC MATERIALS AND DEVICES II,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2007,6782: J7820-J7820 Part 1-2 |
| Palavras-Chave | #光电子学 #RCE- p-i-n-PD |
| Tipo |
会议论文 |
