INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1-xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.

PHOTOLUMINESCENCE STUDIES OF CHEMICAL ADSORPTION OF GAAS/ALXGA1-XAS MULTIQUANTUM-WELL SEMICONDUCTOR

Adsorption of ferrocene and p-methylnitrobenzene on a GaAs/AlxGa1-xAs multiquantum well semiconductor is characterized by the changes in the photoluminescent response in terms of the interactions of adsorbed molecules with surface states.

Transient photocurrent investigation of photo-processes of lattice-matched MQW GaAs/AlxGa1-xAs electrode

Transient photocurrents induced by short light pulses at lattice-matched GaAs/AlxGa1-xAs multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent decay transients were observed at various potentials. By analysis of the dual exponential decay transients, information on steady state photocurrents (I-s), surface collection of photoexcited minority carriers (G(0)) and lifetimes of surface states (T-s) was obtained. The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.

Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors

The wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors （DBR） is studied by scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. Some voids distribute along the oxide/GaAs interfaces due to the stress induced by the wet oxidation of the AlGaAs layers. These voids decrease the shrinkage of the Al2O3 layers to 8% instead of the theoretical 20% when compared to the unoxidized AlGaAs layers. With the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. As a result,the oxide quality is better.

高铝AlxGa1-xAs氧化层对垂直腔面发射激光器的影响

针对可见光垂直腔面发射激光器的制备,通过湿氮氧化实验和测量微区光致发光谱分别研究了高铝组分AlxGa1-xAs的氧化特性及氧化产物的收缩应力对有源区的影响,结合器件结构设计确定了氧化限制层AlxGa1-x-As的铝组分和最佳位置,并制备出了低阈值电流的AlGaInP系垂直腔面发射激光器.

四极SIMS对AlxGa1-xAs中Si的定量分析

讨论了用MIQ-156四极SIMS仪器对Al_xGa_(1-x)As中Si进行定量分析的实验方法,考察了测量结果的重复性及x变化时Si RSF的变化规律,在IMS-4f SIMS仪器上进行了对比测试,用Cs~+源对~(29)Si的原子检测限达到4×10~(15)cm~(-3).

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

On the recursive sequence Xn = axn-1+bxn-2/c+dxn-1xn-2

In this Paper, we study the invariant intervals, the global attractivity of the equilibrium points, and the asymptotic behavior of the solutions of the difference equation x(n) = ax(n-1) + bx(n-2) / c + dx(n-1)x(n-2), n =1, 2, ..., where a greater than or equal to 0, b, c, d > 0. (C) 2004 Elsevier Inc. All rights reserved.

Derivações de Shamsuddin simples de K[X1,...,Xn] e ideais maximais cíclicos à esquerda da álgebra de Weyl An(k)

Seja K um corpo de característica zero e seja An(K) a n-ésima Álgebra de Weyl sobre K. Neste trabalho, discutimos a existência de ideais maximais à esquerda de An (K) gerados por operadores de ordem 1. Primeiramente, estabelecemos uma relação entre derivações simples de K[X1: ..., Xn] e ideais principais maximais à esquerda de Ân(K). Para n> 2, caracterizamos as derivações de Shamsuddin de K[X1, ..., Xn] que são simples. Depois, mostrámos que se d é uma derivação de Shamsuddin simples de K[X1, ..., Xn], então existe 9 E K[X1, ..., Xn] tal que Ân.(d+g) é um ideal maximal principal à esquerda.

Efeitos interfaciais em heteroestruturas quânticas nô-abruptas: GaAs/ALxGa1-xAs

Um minuncioso estudo das propriedades de confinamento em heterostructuras bidimensionais(poços quânticos) GaAs/AlxGa1_xAs, com interfaces graduais é realizado. Um modelo teórico que represente bem a variação da fração molar do alumínio nas interfaces, resultante do aparecimento de micro-rugosidades e ilhas durante os processos de crescimento e recozimento pós-crescimento da amostra, é elaborado. Vários perfis desta fração molar de alumínio nas interfaces são considerados. Soluções analíticas da equação de Schrodinger, na aproximação da massa efetiva constatne nas interfaces, resultando em equações transcendentais, que possibilitam a obtenção dos níveis de energia dos portadores, decorrentes do seu confinamento quântico, são apresentadas. Energias de ligação e de confinamento de excitons 2D, utilizando-se um método analítico e numerérico e a aproximação do potencial efetivo, são também calculadas. Resultados numéricos para os níveis de energia dos portadores e para as energias de ligação e de confinamento dos excitons 2D, em poços quânticos GaAs/Al0.35Ga0.65As não-abruptos, sem e com a presença de campo elétrico aplicado para vários perfis interfaciais da fração de molar, são mostrados. Para a obtenção desses resultados, faz-se uso do método dos degraus múltiplos e da técnica da matriz de transferência, e adota-se, como operador de energia cinética, o de Ben-Daniel e Duque para uma massa efetiva dependente da posição. Conclui-se que um modelo que leva em conta a existência de interfaces não-abruptas e seus diversos perfis é indispensável para uma melhor descrição das propriedades opto-eletrônicas de poços quânticos GaAs/AlxGa1-xAs, enquanto que a aproximação das interfaces abruptas apresenta-se bastante limitada

Photo-induced electron trapping in indirect bandgap AlxGa1-xAs : Si at low temperature

A variation of photoconductivity excitation with wavelength is applied to Si-doped Al0.56Ga0.44As (indirect bandgap material) for a wide range of temperature. The lower the temperature the lower the photocurrent below 70 K. In the range 13-30 K there is a decrease in the photoconductivity spectrum slightly above the bandgap transition energy, followed by another increase in the conductivity. We interpret these results in the light of existing models and confirm the trapping by the X-valley effective mass state. which is responsible for attenuation of persistent photoconductivity below 70 K. A DX0 intermediate state which has non-negligible lifetime is proposed as responsible for the decrease in the photoconductivity with about 561 nm of wavelength of exciting light, in the investigated 13-30 g range.

SUBSTITUTIONAL DONOR RELATED STATES AND AU/GE/NI CONTACTS TO ALXGA1-XAS

Current-voltage measurements performed on bulk AlxGa1-xAs equipped with Au/Ge/Ni contacts reveal surprising deviations from ohmic behaviour when the temperature is lowered to that of liquid nitrogen. Significant differences are observed between samples with x = 0.3 (direct band-gap material) and x = 0.5 (indirect band-gap material). The dominant states of the donor atoms Si (doping) or Ge are found to be responsible for such behaviour. Evidence for the existence of an effective-mass X-valley metastable state is also presented.

THE ENERGY BARRIER FOR ELECTRON TRAPPING IN ALXGA1-XAS

Transient decay of persistent photoconductivity measurements are carried out in samples of different compositions. The capture barrier for electron trapping by DX centers is obtained using a method which employs the Brooks-Herring equation for the electronic mobility. The effect of polarization of the screening cloud is analysed using Takimoto's potential and specifies the limits of applicability of the Brooks-Herring equation in AlxGa1-xAs.