Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

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会议主办方: UNIV SURREY

Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China; Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China; Chinese Acad Sci, Inst Semicond, Natl Lab Supperlattices & Microstruct, Beijing 100083, Peoples R China; City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China; Inst Mat Res & Engn, Singapore 117602, Singapore

会议主办方: UNIV SURREY