Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
| Data(s) |
1998
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| Resumo |
A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR. A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:04Z (GMT). No. of bitstreams: 1 2970.pdf: 181769 bytes, checksum: 001ce22ca2ffce0628e443b321cb61af (MD5) Previous issue date: 1998 SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA China Opt & Optoelectr Mfg Assoc. Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA China Opt & Optoelectr Mfg Assoc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Wang GH; Ma XY; Zhang YF; Peng HI; Wang ST; Li YZ; Chen LH .Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes .见：SPIE-INT SOC OPTICAL ENGINEERING .DISPLAY DEVICES AND SYSTEMS II, 3560,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,89-92 |
| Palavras-Chave | #光电子学 #LED #coupled distributed Bragg reflector #MOCVD #AlGaInP |
| Tipo |
会议论文 |
