INFLUENCE OF DX CENTERS IN THE ALXGA1-XAS BARRIER ON THE LOW-TEMPERATURE DENSITY AND MOBILITY OF THE 2-DIMENSIONAL ELECTRON-GAS IN GAAS/ALGAAS MODULATION-DOPED HETEROSTRUCTURE
| Data(s) |
1995
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
YANG B; WANG ZG; CHENG YH; LIANG JB; LIN LY; ZHU ZP; XU B; LI W .INFLUENCE OF DX CENTERS IN THE ALXGA1-XAS BARRIER ON THE LOW-TEMPERATURE DENSITY AND MOBILITY OF THE 2-DIMENSIONAL ELECTRON-GAS IN GAAS/ALGAAS MODULATION-DOPED HETEROSTRUCTURE ,APPLIED PHYSICS LETTERS ,1995,66(11):1406-1408 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
