PHOTOLUMINESCENCE STUDIES OF CHEMICAL ADSORPTION OF GAAS/ALXGA1-XAS MULTIQUANTUM-WELL SEMICONDUCTOR
| Data(s) |
1995
|
|---|---|
| Resumo |
Adsorption of ferrocene and p-methylnitrobenzene on a GaAs/AlxGa1-xAs multiquantum well semiconductor is characterized by the changes in the photoluminescent response in terms of the interactions of adsorbed molecules with surface states. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
LIU Y; XIAO XR; LI XP; XU ZY; YUAN ZL; ZENG YP; YANG CH; SUN DZ .PHOTOLUMINESCENCE STUDIES OF CHEMICAL ADSORPTION OF GAAS/ALXGA1-XAS MULTIQUANTUM-WELL SEMICONDUCTOR ,JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS,1995,(14):1439-1440 |
| Palavras-Chave | #半导体化学 #RECOMBINATION #SURFACE #GAAS |
| Tipo |
期刊论文 |
