显微成像荧光屏用无机闪烁单晶薄膜的研究进展

随着第三代同步辐射源的出现，由荧光屏和CCD耦合组成的、具有亚微米级空间分辨率、快速在线成像功能的探测器在医疗、安检、工业、科研等领域将会得到广泛应用．本文主要综述了成像荧光屏用材料的概况和发展趋势，重点阐述了闪烁单晶薄膜的研究及发展情况．

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10

氧化铝透明陶瓷中Cr3+的发光性能

采用传统无压烧结工艺制备出透明性良好的掺Cr3+氧化铝陶瓷;测定了陶瓷的吸收光谱、发射光谱和激发光谱。结果表明,氧化铝陶瓷吸收峰与红宝石单晶一致,吸收截面大小与单晶相近;陶瓷中Cr3+离子所处格位的晶体场强较单晶弱,但其发射谱仍有较好的锐线发射;陶瓷中微量添加剂以及晶界的存在使得Al2O3晶胞发生畸变,造成其发射峰宽化。

激光二极管抽运Na，Yb共掺CaF2晶体自调Q激光特性的研究

利用激光二极管（LD）抽运新型Na．Yb共掺CaF2（Na．Yb：CaF2）晶体，获得了1．05μm的自调Q激光输出。利用透射率1％的耦合输出镜，得到最低激光输出的抽运阈值功率仅为70mW。在透射率为2％的输出镜条件下，得到最大输出激光功率为390mw，此时激光的斜度效率达到20%。实验详细记录了自调Q脉冲的周期和宽度随抽运功率的变化关系，随着抽运功率的增加，自调Q脉冲的周期和宽度呈指数衰减。同时，还采用单棱镜进行光谱调谐实验，获得了1036～1059nm的自调Q激光调谐输出。

提拉法生长大尺寸γ-LiAlO2单晶的研究(英文)

由于与GaN晶格失配小(约1．4％)，γ-LiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。本文使用提拉法生长出了尺寸达Ф5×50mm^3的γ-LiAlO2单晶。对该晶体毛坯的各个有代表性的位置作了X射线粉末衍射(XRPD)分析，结果表明仅仅在晶体毛坯的底部生成了一种缺锂相(LiAl5O8)。γ-LiAlO2晶体化学稳定性差，在室温时轻微水解。当在空气中于1100℃退火70h，γ-LiAlO2晶体挥发出锂组分，在表面产生缺锂相(LiAl5O8)。值得注意的是，在γ-LiAlO2晶体的红外光谱区不存

r面白宝石单晶的温梯法生长及缺陷研究

本文描述使用温梯法（TGT）生长（1-↑102）方向的白宝石单晶，应用X射线双晶摇摆曲线（XRC）测定了晶体内部的完整性，再利用KOH熔体腐蚀出样品的r面（1-↑102）上的位错蚀坑，借助扫描电子显微镜（SEM）进行观察，发现r面白宝石的位错腐蚀坑呈等腰三角形，并且有台阶状结构，并分析了位错的成因。

透明导电氧化物β-Ga2O3单晶生长的研究进展

本文对β-Ga2O3单晶体的研究情况进行了综合，主要介绍了β-Ga2O3单晶体的生长方法：Verneuil法、提拉法和浮区法生长技术，并简单介绍了β-Ga2O3单晶体的光学和电学性质及其在GaN衬底方面的应用。β-Ga2O3单晶体的优异性质使其可以成为新一代的透明导电材料。

Yb:YAP与Yb:YAG晶体光谱性能比较

应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体，对比了室温下两种晶体的吸收和发射光谱特性。结果表明，Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值；同时对比发现，Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍，它容易实现LD泵；由于Yb:YAP晶体的各向异性，它有轴向效应明显，它可以产生偏振激光。

β-Ga2O3 单晶NH3中氮化的研究

为了将β-Ga2O3单晶应用于作为外延生长优质GaN薄膜的衬底材料，本文对β-Ga2O3 (100)进行了氮化处理，并且主要讨论了氮化温度以及β-Ga2O3表面的粗糙程度对GaN形成的影响。我们发现，最理想的氮化温度在900oC。此时，在抛光的β-Ga2O3的表面上生成了一层具有六方结构并且有择优取向的GaN层。本文同时也对氮化的机理进行了讨论。

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

Photorelease of Pyridyl Esters in Organometallic Ru(II) Arene Complexes

New Ru(II) arene complexes of formula [((6)-p-cym)Ru(N-N)(X)](2+) (where p-cym = para-cymene, N-N = 2,2'-bipyrimidine (bpm) or 2,2'-bipyridine (bpy) and X = m/p-COOMe-Py, 1-4) were synthesised and characterized, including the molecular structure of complexes [((6)-p-cym)Ru(bpy)(m-COOMe-Py)](2+) (3) and [((6)-p-cym)Ru(bpy)(p-COOMe-Py)](2+) (4) by single-crystal X-ray diffraction. Complexes 1-4 are stable in the dark in aqueous solution over 48 h and photolysis studies indicate that they can photodissociate the monodentate m/p-COOMe-Py ligands selectively with yields lower than 1%. DFT and TD-DFT calculations (B3LYP/LanL2DZ/6-31G**) performed on singlet and triplet states pinpoint a low-energy triplet state as the reactive state responsible for the selective dissociation of the monodentate pyridyl ligands.

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Thermoelastic dissipation in MEMS/NEMS flexural mode resonators.

Understanding the energy dissipation mechanisms in single-crystal silicon MEMS/NEMS resonators are particularly important to maximizing an important figure of merit relevant for miniature sensor and signal processing applications: the Quality factor (Q) of resonance. This paper discusses thermoelastic dissipation (TED) as the dominant internal-friction mechanism in flexural mode MEMS/NEMS resonators. Criteria for optimizing the geometrical design of flexural mode MEMS/NEMS resonators are theoretically established with a view towards minimizing the TED for single-crystal silicon MEMS/NEMS flexural mode resonators.

Selective epitaxial growth in silicon on insulator: Planarity and mass flow

Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.