γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10

Transparent and crack-free gamma-LiAlO2 single crystal was grown by quick Czochrulski technique. However, high melting point and easy volatilization degraded the quality of the crystal. The fall with at half maximum (FWHM) value dropped from 116.9arcsec to 44.2aresec when the crystal was modified by vapor transport equilibrium (VTF) technique. But when the temperature of VTE was 1300 degrees C, the FWHM value increased to 55.2aresee. The [100]-orientation thermal expansion coefficient of the as-grown crystal was 17.6798 x 10(-6)/K, while that along the [001]-orientation was 10,7664 x 10-6/K. After three VTE treatments, the corresponding thermal expansion coefficients decreased to 16.6539 x 10(-6)/K and 10.1784 x 10(-6)/K, respectively.