r面白宝石单晶的温梯法生长及缺陷研究

本文描述使用温梯法（TGT）生长（1-↑102）方向的白宝石单晶，应用X射线双晶摇摆曲线（XRC）测定了晶体内部的完整性，再利用KOH熔体腐蚀出样品的r面（1-↑102）上的位错蚀坑，借助扫描电子显微镜（SEM）进行观察，发现r面白宝石的位错腐蚀坑呈等腰三角形，并且有台阶状结构，并分析了位错的成因。

A high quality sapphire single crystal oriented along (11 over-bar 02) was grown by the temperature gradient technique (TGT) and the crystal quality was investigated using X-ray rocking curve (XRC). The etch pits of dislocations were revealed on the r-plane (11 over-bar 02) sapphire by using a melted KOH as etchants. Scanning electron microscope (SEM) demonstrates that the shapes of etch pits located in r-plane of sapphire look like a isosceles triangle with sidestep-like structure. And the mechanism of the formation of dislocations was discussed.