Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition


Autoria(s): Xie Zi-Li; Zhang Rong; Xia Chang-Tai; Xiu Xiang-Qian; Han Ping; Liu Bin; Zhao Hong; Jiang Ruo-Lian; Shi Yi; Zheng You-Dou
Data(s)

2008

Resumo

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Identificador

http://ir.siom.ac.cn/handle/181231/6095

http://www.irgrid.ac.cn/handle/1471x/12522

Idioma(s)

英语

Fonte

Xie Zi-Li;Zhang Rong;Xia Chang-Tai;Xiu Xiang-Qian;Han Ping;Liu Bin;Zhao Hong;Jiang Ruo-Lian;Shi Yi;Zheng You-Dou.,Chin. Phys. Lett.,2008,25(6):2185-2186

Palavras-Chave #光学材料;晶体 #GROWTH
Tipo

期刊论文