Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

High-quality Tm:Y2SiO5 (Tin: YSO) single crystal was grown by the Czochralski method. The lattice parameter and separation coefficient of the crystal were measured. The three polarization axis: < 010 >, D-1 and D-2 of this monoclinic single crystal were determined by Lane method. Absorption spectra, fluorescence spectra and fluorescent lifetime of this single crystal were measured along the three polarization axes. Its absorption line width and absorption cross section were also calculated. A stronger absorption peak at 790 nm and a fluorescence peak with enhanced emission at 2 mu m were observed along the D-1 polarization axis compared with other two axes. Besides, this crystal exhibits bigger absorption cross section and longer fluorescence lifetime along D-1 polarization axis. Therefore, Tm:YSO single crystal is suitable for AlGaAs diode-pumped laser and it possesses great potentiality in the application of 2 mu m solid-state laser.