β-Ga2O3 单晶NH3中氮化的研究

为了将β-Ga2O3单晶应用于作为外延生长优质GaN薄膜的衬底材料，本文对β-Ga2O3 (100)进行了氮化处理，并且主要讨论了氮化温度以及β-Ga2O3表面的粗糙程度对GaN形成的影响。我们发现，最理想的氮化温度在900oC。此时，在抛光的β-Ga2O3的表面上生成了一层具有六方结构并且有择优取向的GaN层。本文同时也对氮化的机理进行了讨论。

Nitridated β-Ga<inf>2</inf>O<inf>3</inf> (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of β-Ga<inf>2</inf>O<inf>3</inf> wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900°C, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.