1.55μm Fabry-Perot Thermo-Optical Tunable Filter with amorphous-Si as Cavity

A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

Si基高速为OEIC光接收机芯片的研究

Si基光电子集成（OEIC）光接收机在光通信系统接入网、光互连、光存储等方面有着广泛的应用前景。本文综述Si基OEIC光接收芯片的研究现状，分析了其发展趋势，探讨了进一步提高性能的途径。

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

掺杂nc-Si:H薄膜中纳米硅晶粒的择优生长

发现PECVD生长的系列掺杂氢化纳米硅（nc-Si:H）薄膜中纳米硅晶粒（nc-Si）有择优生长的趋势。用Raman、XRD、AFM、HRTEM等方法研究其微观结构时发现：掺磷的nc-Si:H薄膜XRD峰位的二倍衍射角约为33~°。掺硼nc-Si:H薄膜的XRD峰位的二倍衍射角约为47~°。用自由能密度与序参量的关系结合实验参数分析得到：较高的衬底温度引起序参量改变，使掺磷nc-Si:H薄膜中nc-Si的晶面择优生长。适当的电场作用引起序参量改变，导致掺硼nc-Si:H薄膜在一定的身由能密度范围内nc-Si的晶面择优生长。

Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.

铁磁／半导体异质结材料MnSb／Si的物理气相沉积生长

采用一种新的生长铁磁／半导体异质结材料的方法——物理气相沉积方法生长了一种铁磁／半导体异质结材料MnSb／Si．对所获得的样品进行特征X射线能谱分析表明Mn和Sb在Si衬底上的沉积速率相近，它们的原子百分数之比接近1

纳米技术与能带工程对Si基高效发光的促进

自1991年Canham L. T发现多孔Si的强发光特性之后，Si基发光的系列性探索已走过了10年的路程。人们从中认请了一些重要的科学问题，发展和掌握了许多新的技术，也取得了许多有价值的重要进展。可以说过去的10年是处於四方探索的百花齐放阶段。现在夫论从应用目标的需求和开拓研究的思路与途径，都更加明确、集中，一个有实用价值的Si基发光器件的研究高潮即将来临。本文着重评述介绍了四个方面的研究进展，即局域态nc-Si的发光，基於能带工程的Si基发光，纳米结构Si化物的发光和Ge/Si量子点的发光研究，指出了各自存在的问题，提出了若干新的研究思路。本文还把Si基发光的研究与微电子发展需求紧密结合，由此提出了下一阶段开展Si基发光研究应予遵循的几项原则。

镜面起伏对1.55 μm Si基MEMS光滤波器的影响

用传输矩阵方法，在简化的光学模型基础上，分别讨论了分布式Bragg反射镜DBR（Distributed Bragg Reflector）的生长精度及镜面起伏对1.55 μm Si基MEMS（Micro-Electro-Mechanical-System）可调谐光滤波器透射谱的影响。计算表明

热退火γ-Al_2O_3/Si异质结构薄膜质量改进

采用高真空MOCVD外延技术，利用TMA（Al(CH_3)_3）和O_2作为反应源，在Si(100)衬底上外延生长γ－Al_2O_3绝缘膜形成γ-Al_2O_3/Si异质结构材料。同时，引入外延后退火工艺以便改善γ-Al_2O_3薄膜的晶体质量及电学性能。测试结果表明，通过在O_2常压下的退火工艺可以有效地消除γ－Al_2O_3外延层的残余热应力及孪晶缺陷，改善外延层的晶体质量，同时可以提高MOS电容的抗击穿能力，降低漏电电流。

(111)Si上外延生长六方GaN的TEM观察

利用衍衬、SAED、HRTEM对在（111）Si上外延生长的六方GaN进行了观察分析。GaN外延层与缓冲层和基底的取向关系为(0001)_(GaN)∥(0001)_(AlN)∥(111)_(Si)，[11(2-bar)0]_(GaN)∥[11(2-bar)0]_(AlN)∥[110]_(Si)。GaN外延层中存在倒反畴。GaN中位错以刃型位错为主。In_(0.1) Ga_(0.9) N/GaN的多重量子阱结构（MQW）具有阻挡穿透位错，降低位错密度的作用。

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ～ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).

空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量变化的比较

研究了空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量1 * 10~9 ～ 5 * 10~(13) cm~(-2)的变化。实验表明，两种太阳电池的电性能随辐照注量增加有不同的衰降趋势，背场Si太阳电池性能参数I_(sc)、V_(oc)和P_(max)衰降变化快，辐照注量为2 * 10~(10)cm~(-2)时，P_(max)就已衰降为原值的75％；而GaAs/Ge电池对应相同的衰降辐照注量达8 * 10~(11)cm~(-2), 且其I_(sc)、V_(oc)和P_(max)衰降变化起初缓慢，当辐照注量接近3 * 10~(12)~(-2)时才迅速下降。背场Si电池和GaAs/Ge电池性能衰降分别与擀子辐照引入的E_v + 0.14eV及E_v + 0.43eV和E_c - 0.41eV深能级有关。

质量分离的双离子束沉积法生长CeO_2（111）/Si薄膜

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Nonlinear Absorption Properties of nc-Si∶H Thin Films

于2010-11-23批量导入

a-Si∶O∶H薄膜微结构及其高温退火行为研究

于2010-11-23批量导入