快速热退火和氢等离子体处理对富硅氧化硅薄膜微结构与发光的影响

采用micro-Raman散射、傅里叶变换红外吸收谱和光致发光谱研究了快速热退火及氢等离子体处理对等离子体增强化学气相沉积法200 ℃衬底温度下生长的富硅氧化硅（SRSO）薄膜微结构和发光的影响。研究发现在300-600 ℃范围内退火，SRSO薄膜中非晶硅和SiO_x:H两相之间的相分离程度随退火温度升高趋于减小；而在600-900 ℃范围内退火，其相分离程度退火温度升高又趋于增大；同时发现SRSO薄膜发光先是随退火温度的升高显著加强，然后在退火温度达到和超过600 ℃后迅速减弱；发光峰位在300 ℃退火后蓝移，此后随退火温度升高逐渐红移。对不同温度退火后的薄膜进行氢等离子体处理，发光强度不同程度有所增强，发光峰位有所移动，但不同温度退火样品发光增强的幅度和峰位移动的趋势不同。分析认为退火能够引起薄膜中非晶硅颗粒尺度、颗粒表面结构状态以及氢的存在和分布等方面的变化。结果表明不仅颗粒的尺度大小，而且颗粒表面的结构状态都对非晶硅颗粒能带结构和光生载流子复合机理发挥重要影响。

Growth of Cubic GaN by MOCVD at High Temperature

High quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV. It is smaller than that of the sample grown at 830 ℃. In X-ray diffraction (XRD) measurement, the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21'. It can be concluded that, although c-GaN is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. The relationship between the growth rate and growth temperature is also discussed.

用硅离子注入SiO_2层方法制备的纳米硅的光学性质

报道了用硅离子注入热氧化生长的SiO_2层后热退火的方法制备纳米硅样品,并在室温下测量了样品的光致发光谱及其退火温度的关系。实验结果表明,在800℃以下退火的样品的发光是由于离子注入而引入SiO_2层的缺陷发光,在900℃以上退火,才观察到纳米硅的发光,在1100℃下退火,纳米硅发光达到最强,纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应。在直角散射配置下,首次观察到纳米硅的特征拉曼散射峰,进一步证实了光致发光谱的结果。

氢化非晶氧化硅薄膜的微结构及光致发光的研究

利用等离子增强化学气相沉积技术制备了一组含量不同的氢化非晶氧化硅(a-SiO_x:H)薄膜,室温下在550～900 nm的波长范围内观察到了两个强的发光带:一个是由峰位在670 nm(1.85 eV)左右的主峰和峰位在835 nm(1.46 eV)的伴峰组成的包络,另一个只能在氮气氛中1170℃退火后的样品中观测到,峰位大约在850 nm。通过对红外谱和微区Raman谱的分析,认为这二个发光带可能分别与存在于薄膜中的a-Si原子团和Si纳米晶粒有关。

含纳米锗粒二氧化硅薄膜的光致发光研究

以锗-二氧化硅(GSO)复合靶作为溅射靶,改变靶上锗与总靶面积比为0％,5％和10％, 用射频磁控溅射方法在p型硅衬底上沉积了含锗量不同的三种二氧化硅薄膜。各样品分别在氮气氛中经过300至900℃不同温度的退火处理。通过对样品所作Raman散射光谱的分析，发现随着锗在溅射靶中面积比的增加，所制备的氧化硅薄膜中纳米锗粒的平均尺寸在增大。确定出随着退火温度由600℃升高到900℃，GSO(5％)样品中纳米锗粒的平均直径由5.4nm增至9.5nm。含纳米锗粒大小不同的二氧化硅薄膜的光致发光谱中都存在位于2.1eV的发光峰，它并不随纳米锗粒的存在与否或纳米锗粒的尺寸而改变，对于以纯二氧化硅靶制备的二氧化硅膜的光致发光谱中还多出两个位于1.9和2.3eV的发光峰。以上实验结果与量子限制模型的推论相矛盾，却可用量子限制/发光中心模型予以解释。

低阈值电流密度InGaAs/GaAs/AlGaAs应变量子阱激光器

利用分子束外延技术,生长了极低阈值电流密度、低内损耗、高量子效率的InGaAs/GaAs/AlGaAs应变量子阱激光器。在腔长900μm时，80μm宽接触激光器阈值电流密度是125A/cm~2,在腔长为2000μm时是113A/cm~2,这样低的阈值电流密度是目前国内报道的最低值。激光器的内损耗和内量子效率分别是2cm~(-1)和84％。

Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

Tunable MQW-DBR lasers using selective area growth

The tunable ridge waveguide distributed Bragg reflector (DBR) lasers designed for wavelength-division-multiplex (WDM) communication systems at 1.55 um by using selective area growth (SAG) is reported. The threshold current of the DBR laser is 62mA and the output power is more than 8mW. The isolation resistance between the active region and the Bragg region is 30K Ohm. The total tuning range is 6.5nm and this DBR laser can provide 6 continuous standard WDM channels with 100GHz channel spacing; in the tuning range, the single mode suppression ratio (SMSR) is maintained more than 32dB and the maximum output power variation is less than 3dB.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

Wavelength tunable electroabsorption modulated DFB baser with thin film heater

　

Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon

Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from similar to 2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1).