Light-excited structural instability of a-Si : H.
Data(s) |
1999
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Resumo |
With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect. With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:06Z (GMT). No. of bitstreams: 0 Previous issue date: 1999 Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc. Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
MATERIALS RESEARCH SOCIETY 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA |
Fonte |
Kong GL; Zhang DL; Yue GZ; Wang YQ; Liao XB .Light-excited structural instability of a-Si : H. .见:MATERIALS RESEARCH SOCIETY .AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1999,697-708 |
Palavras-Chave | #半导体材料 #HYDROGENATED AMORPHOUS-SILICON |
Tipo |
会议论文 |