Light-excited structural instability of a-Si : H.


Autoria(s): Kong GL; Zhang DL; Yue GZ; Wang YQ; Liao XB
Data(s)

1999

Resumo

With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect.

With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect.

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Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.

Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China

Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.

Identificador

http://ir.semi.ac.cn/handle/172111/13797

http://www.irgrid.ac.cn/handle/1471x/105080

Idioma(s)

英语

Publicador

MATERIALS RESEARCH SOCIETY

506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA

Fonte

Kong GL; Zhang DL; Yue GZ; Wang YQ; Liao XB .Light-excited structural instability of a-Si : H. .见:MATERIALS RESEARCH SOCIETY .AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1999,697-708

Palavras-Chave #半导体材料 #HYDROGENATED AMORPHOUS-SILICON
Tipo

会议论文