Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition
| Data(s) |
2003
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| Resumo |
Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:27Z (GMT). No. of bitstreams: 1 2800.pdf: 700258 bytes, checksum: d606f43829ab4398d03394524de211aa (MD5) Previous issue date: 2003 Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ. Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
MATERIALS RESEARCH SOCIETY 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA |
| Fonte |
Zeng XB; Liao XB; Diao HW; Hu ZH; Xu YY; Zhang SB; Chen CY; Chen WD; Kong GL .Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition .见：MATERIALS RESEARCH SOCIETY .QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,2003,667-672 |
| Palavras-Chave | #半导体材料 #LASER-ABLATION #SEMICONDUCTOR NANOWIRES #GROWTH #MECHANISM #EVAPORATION #DIAMETER #WIRES |
| Tipo |
会议论文 |
