Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

于2010-10-29批量导入

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Japan Soc Appl Phys.; IEEE Lasers & Electro Opt Soc.; IEEE Electron Devices Soc.; Inst Electr, Informat & Commun Engineers.; Optoelectr Ind & Technol Dec Assoc.; Res & Dev Assoc Future Electron Devices.

Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China

Japan Soc Appl Phys.; IEEE Lasers & Electro Opt Soc.; IEEE Electron Devices Soc.; Inst Electr, Informat & Commun Engineers.; Optoelectr Ind & Technol Dec Assoc.; Res & Dev Assoc Future Electron Devices.