Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

于2010-10-29批量导入

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Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.