Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.

GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY

HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.

NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER

A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.

Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices

With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.

Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells

High-quality compressively strained In0.63Ga0.37As/InP quantum wells with different well widths (1-11 nm) have been grown coherently on InP substrates using a home-made gas source molecular beam epitaxy (GSMBE) system. The indium composition in the wells of the sample was determined by means of high-resolution X-ray diffraction and its computer simulation. it is found that the exciton transition energies determined by photoluminescence (PL) at 10 K are in good agreement with those calculated using a deformation potential model. Sharp and intense peaks for each well can be well resolved in the 10 K PL spectra. For wells narrower than 4 nm, the line width of the PL peaks are smaller than the theoretical values of the line-width broadening due to 1 hit interface fluctuation, showing that the interface fluctuation of our sample is within 1 ML. For wells of 7 and 9 nm, the PL peak widths are as low as 4.5 meV.

High quality CeO2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology

By using the mass-analyzed low energy dual ion beam deposition technique, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Angstrom, has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X-ray double-crystal diffraction shows that the full width at half maximum of the (222) and (111) peaks of the film are less than 23 and 32 s, respectively, confirming that the film is a perfect single crystal. (C) 1995 American Institute of Physics.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

High quality hydrogenated amorphous silicon films with significantly improved stability

High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.