NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER
Data(s) |
1992
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Resumo |
A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
LI JM; CHONG M; ZHU J.NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER,ELECTRONICS LETTERS,1992,28(7):652-653 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |