NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER


Autoria(s): LI JM; CHONG M; ZHU J
Data(s)

1992

Resumo

A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.

Identificador

http://ir.semi.ac.cn/handle/172111/14209

http://www.irgrid.ac.cn/handle/1471x/101139

Idioma(s)

英语

Fonte

LI JM; CHONG M; ZHU J.NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER,ELECTRONICS LETTERS,1992,28(7):652-653

Palavras-Chave #半导体材料
Tipo

期刊论文