Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
| Data(s) |
2006
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|---|---|
| Resumo |
Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results. Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
METALLURGICAL INDUSTRY PRESS 2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA |
| Fonte |
Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX .Growth of high quality semi-insulating InP single crystal by suppression of compensation defects .见：METALLURGICAL INDUSTRY PRESS .JOURNAL OF RARE EARTHS,2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA ,MAR 2006,24: 75-77 Sp. Iss. SI |
| Palavras-Chave | #半导体材料 #indium phosphide |
| Tipo |
会议论文 |
