High quality hydrogenated amorphous silicon films with significantly improved stability

High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

于2010-10-29批量导入

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Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.

Chinese Acad Sci, State Lab Surface Phys, Inst Semicond, Beijing 100083, Peoples R China

Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.