MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

于2010-10-29批量导入

Made available in DSpace on 2010-10-29T06:36:16Z (GMT). No. of bitstreams: 1 2768.pdf: 234813 bytes, checksum: a4a09b8615f6a9c4cf6d8389cad6dcea (MD5) Previous issue date: 2003

Hong Kong Baptist Univ.; Chinese Univ Hong Kong.; City Univ Hong Kong.; Hong Kong Polytech Univ.; Univ Hong Kong.; IEEE LEOS Hong Kong Chapter.; AIXTRON AG.; Kopin Corp.; Oxford Instruments Teltec Semiconductor Pacific Ltd.; Hong Kong Sci & Technol Pk Corp.; Soc Informat Display Hong Kong Chapter.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Hong Kong Baptist Univ.; Chinese Univ Hong Kong.; City Univ Hong Kong.; Hong Kong Polytech Univ.; Univ Hong Kong.; IEEE LEOS Hong Kong Chapter.; AIXTRON AG.; Kopin Corp.; Oxford Instruments Teltec Semiconductor Pacific Ltd.; Hong Kong Sci & Technol Pk Corp.; Soc Informat Display Hong Kong Chapter.