GROWTH OF HIGH-QUALITY GAAS-ALGAAS QUANTUM WELL STRUCTURES

Autoria(s): KONG MY; SUN DZ; LIANG JB; HUANG YN; ZHEN YP
Data(s)

1987
Identificador

http://ir.semi.ac.cn/handle/172111/14621

http://www.irgrid.ac.cn/handle/1471x/101345
Idioma(s)

英语
Fonte

KONG MY; SUN DZ; LIANG JB; HUANG YN; ZHEN YP.GROWTH OF HIGH-QUALITY GAAS-ALGAAS QUANTUM WELL STRUCTURES,JOURNAL OF ELECTRONIC MATERIALS,1987,16(6):417-421
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital