MBE GROWTH OF HIGH-QUALITY IN0.4GA0.6AS/GAAS AND ITS APPLICATION TO PHOTODETECTOR

Autoria(s): LIN YW; TZENG YC; RIBAS P; PARK RM
Data(s)

1992
Identificador

http://ir.semi.ac.cn/handle/172111/14145

http://www.irgrid.ac.cn/handle/1471x/101107
Idioma(s)

英语
Fonte

LIN YW; TZENG YC; RIBAS P; PARK RM.MBE GROWTH OF HIGH-QUALITY IN0.4GA0.6AS/GAAS AND ITS APPLICATION TO PHOTODETECTOR,SUPERLATTICES AND MICROSTRUCTURES ,1992,12(3):287-291
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital