Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror

A high-power continuous wave (cw) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41 %. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers. (C) 2006 Elsevier Ltd. All rights reserved.

A bidirectionall diode-pumped, passively mode-locked Nd : YVO4 ring laser with a low-temperature-grown semiconductor saturable absorber mirror

We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperature-grown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 x 200 mW.

Passively Q-switched Nd : GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 mu m with In0.25Ga0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 mu J and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W. (c) 2006 Elsevier Ltd. All rights reserved.

Experiments of a diode-pumped Nd : GdVO4/LT-GaAs Q-switched and mode-locked laser

A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 750 MHz. The laser properties of the operational parameters on the pump power were also investigated experimentally.

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser

A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.

Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

Q-switched and mode-locked diode-pumped Nd : YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained. (c) 2005 Elsevier GmbH. All rights reserved.

10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth

In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator( EAM ) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure ( 22 x 10(2) Pa ) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.

A passively mode-locked diode-end-pumped Nd : YAG laser with a semiconductor saturable absorber mirror grown by metal organic chemical vapour deposition

We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror (SESAM) from which we achieved a 10 ps pulse duration at 150 MHz repetition rate. The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time was measured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.

Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.