High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror
| Data(s) |
2007
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|---|---|
| Resumo |
Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Peng, JY (Peng, J. Y.); Wang, BS (Wang, B. S.); Wang, YG (Wang, Y. G.); Miao, JG (Miao, J. G.); Hao, EJ (Hao, E. J.); Tan, HM (Tan, H. M.); Qian, LS (Qian, L. S.); Ma, XY (Ma, X. Y.) .High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror ,LASER PHYSICS,AUG 2007,17 (8):1033-1036 |
| Palavras-Chave | #光电子学 #SATURABLE-ABSORBER |
| Tipo |
期刊论文 |
