Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber
Data(s) |
2006
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Resumo |
We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Pan SD (Pan Shu-Di); He JL (He Jing-Liang); Hou YE (Hou Yu-E); Fan YX (Fan Ya-Xian); Wang HT (Wang Hui-Tian); Wang YG (Wang Yong-Gang); Ma XY (Ma Xiao-Yu) .Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber ,IEEE JOURNAL OF QUANTUM ELECTRONICS,2006,42(9-10):1097-1100 |
Palavras-Chave | #半导体器件 #diode-pumped lasers #mode-locked lasers #neodymium-solid-state lasers #semiconductor absorber #SATURABLE BRAGG REFLECTOR #SOLID-STATE LASERS #ND-YVO4 LASER #MIRRORS |
Tipo |
期刊论文 |