Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser
| Data(s) |
2006
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| Resumo |
A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu J (Liu Jie); Wang CX (Wang Chunxing); Tian WM (Tian Wenmiao); Liu SH (Liu Shihua); Wang GG (Wang Guanggang); Wang YG (Wang Yonggang) .Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,2006,45(8A):6268-6270 |
| Palavras-Chave | #半导体物理 #LT-GaAs #Nd : GdVO4 #Q-switched #mode-locked #PASSIVE-MODE-LOCKING #LOCKED ND-YVO4 LASER #SATURABLE ABSORBER #CR4+-YAG #MIRROR #CAVITY |
| Tipo |
期刊论文 |
