Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber
| Data(s) |
2003
|
|---|---|
| Resumo |
A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang QL; Feng BH; Zhang DX; Fu PM; Zhang ZG; Zhao ZW; Deng PZ; Jun X; Xu XD; Wang YG; Ma XY .Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber ,CHINESE PHYSICS LETTERS,2003 ,20 (10):1741-1743 |
| Palavras-Chave | #半导体物理 #TRANSIENT ENERGY-TRANSFER |
| Tipo |
期刊论文 |
