Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber
| Data(s) |
2006
|
|---|---|
| Resumo |
By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Peng, JY (Peng, J. Y.); Tan, HM (Tan, H. M.); Wang, YG (Wang, Y. G.); Wang, BS (Wang, B. S.); Miao, JG (Miao, J. G.); Qian, LS (Qian, L. S.); Ma, XY (Ma, X. Y.) .Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber ,LASER PHYSICS,DEC 2006,16 (12):1601-1604 |
| Palavras-Chave | #光电子学 #SATURABLE ABSORBER |
| Tipo |
期刊论文 |
