Experiments of a diode-pumped Nd : GdVO4/LT-GaAs Q-switched and mode-locked laser


Autoria(s): Yang J; Fu Q; Liu J; Wang Y
Data(s)

2007

Resumo

A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 750 MHz. The laser properties of the operational parameters on the pump power were also investigated experimentally.

Identificador

http://ir.semi.ac.cn/handle/172111/9638

http://www.irgrid.ac.cn/handle/1471x/64231

Idioma(s)

英语

Fonte

Yang, J (Yang, J.); Fu, Q (Fu, Q.); Liu, J (Liu, J.); Wang, Y (Wang, Y.) .Experiments of a diode-pumped Nd : GdVO4/LT-GaAs Q-switched and mode-locked laser ,LASER PHYSICS LETTERS,JAN 2007 ,4 (1):20-22

Palavras-Chave #半导体器件 #LT-GaAs
Tipo

期刊论文