Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature
| Data(s) |
2007
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|---|---|
| Resumo |
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu, J (Liu, J.); Li, L (Li, L.); Liu, S (Liu, S.); Liu, M (Liu, Min); Wang, YG (Wang, Y.-G.) .Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature ,EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,SEP 2007,39 (3):233-236 |
| Palavras-Chave | #光电子学 #ND-YAG LASER |
| Tipo |
期刊论文 |
