Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells

In order to enhance light absorption of thin film poly-crystalline silicon (TF poly-Si) solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory, the effective photon trapping flux (EPTF) and effective photon trapping efficiency (EPTE) were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures. The EPTF, EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer. With an optimum size and density of SiO2/Au nanoshell light trapping layer, the EPTE could reach up to 40% due to the enhancement of light trapping over a broad spectral range, especially from 500 to 800 nm.

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

n-ZnO/p-Si heterojunction light-emitting diodes (LEDs) show weak defect-related electroluminescence (EL). In order to analyze the origin of the weak EL, the energy band alignment and interfacial microstructure of ZnO/Si heterojunction are investigated by x-ray photoelectron spectroscopy. The valence band offset (VBO) is determined to be 3.15 +/- 0.15 eV and conduction band offset is -0.90 +/- 0.15 eV, showing a type-II band alignment. The higher VBO means a high potential barrier for holes injected from Si into ZnO, and hence, charge carrier recombination takes place mainly on the Si side rather than the ZnO layer. It is also found that a 2.1 nm thick SiOx interfacial layer is formed at the ZnO/Si interface. The unavoidable SiOx interfacial layer provides to a large number of nonradiative centers at the ZnO/Si interface and gives rise to poor crystallinity in the ZnO films. The weak EL from the n-ZnO/p-Si LEDs can be ascribed to the high ZnO/Si VBO and existence of the SiOx interfacial layer.

Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates

Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

立方氮化硼薄膜的原位Si 掺杂研究

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n-Si半导体作为光电化学分解水阳极的稳定性研究

单晶Si由于它的禁带宽度（1.1ev）与太阳光谱相匹配，作为光活性电极材料被广泛研究。但它作为光阳极不稳定，易腐蚀。所以提高单晶Si作为光阳极时的稳定性就成了关键问题。我们所采用的是在n-Si表面沉积保护膜的方法。首先用电沉积法在n-Si表面沉积一层Pd，光电流得到了很大的提高。从未沉积Pd前的2mA／cm~2增加到29.1mA／cm~2（电极电位在1.5V vs，SCE），并且稳定性增强，能在光电解水体系中稳定工作4小时，但4小时后光电流衰减，所以在n-Si表面沉积Pd有一定的保护作用，但保护作用是有限的。我们在n-Si/Pd电极上用化学沉积法再沉积一层锰的氧化物膜，大大提高了电极的稳定性，在0.5MKOH溶液中，电位控制在0.4V（vs.SCE）时，可以稳定工作110小时。化学沉积锰氧化物膜的烧结温度为250℃（在N_2或Ar保护下），得到的锰氧化物膜经X－射线光电子能谱确定锰的价态为＋3价。RuO_2在n-Si/Pd/Mn_2O_3表面的沉积对氧的析出有催化作用，与未沉积前相比不电流起始电位负移了0.15V，比氧析出可逆电位负80mV [氧析出中逆电位在0.5M KOH溶液中（pH＝13.7）为0.18v（vs.SCE）]，沉积RuO_2的n-Si/Pd/Mn_2O_3/RuO_2电极，也具有同样好的稳定性，连续工作112小时光电流无明显变化。由交流阻抗法求得它的平带电位为-0.5V vs.SCE （0.5M KOH溶液）和0.0V vs.SCE（0.5M K_2SO_4溶液），并由此进一步得出它在0.5M KOH溶液中的能级结构。据此分析了n-Si电极在不加偏压下不能实现水的光电化学分解的原因。由光谱响应实验结果得到。沉积保护膜后的n-Si电极在整个可见光及近红外区内仍然有较好的光吸收。由光电流起始波长1130nm计算出的禁带宽度为1.1eV，与文献值一致。

EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS

In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation.

ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION

20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) and Ge0.5Si0.5 (5 nm)/Si(25 nm) were studied by double-crystal X-ray diffraction. The Ge content x was determined by computer simulation of the diffraction features from the superlattice. This method is shown to be independent of the relaxation of the superlattice. Alternatively, x can be obtained from the measured difference DELTAa/a in lattice spacing perpendicular to the growth plane. It is sensitive to the relaxation. Comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained.

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

A NEW METHOD FOR DETECTING SUBTLE CHANGES IN SI-H BONDS OF A-SI-H

A new method developed for detecting possible subtle changes in Si-H bonds of a-Si:H after light soaking is described in detail. The method promises a sensitivity orders of magnitude higher than that reached by the usual IR spectrometer. Some preliminary results on phosphorus doped a-Si:H are given.

HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.