Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates

Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

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Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07T13:09:19Z (GMT) No. of bitstreams: 1 Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates.pdf: 189693 bytes, checksum: 496e709b735d265458bab1dca731b48b (MD5)

Made available in DSpace on 2010-09-07T13:09:19Z (GMT). No. of bitstreams: 1 Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates.pdf: 189693 bytes, checksum: 496e709b735d265458bab1dca731b48b (MD5) Previous issue date: 2010

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