立方氮化硼薄膜的原位Si 掺杂研究
| Contribuinte(s) |
张兴旺 |
|---|---|
| Data(s) |
2010
|
| Resumo |
Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T07:37:01Z No. of bitstreams: 1 应杰--硕士毕业论文.pdf: 1592507 bytes, checksum: 1f4b3af275bf385f2180286c3b90faf8 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-07T08:03:25Z (GMT) No. of bitstreams: 1 应杰--硕士毕业论文.pdf: 1592507 bytes, checksum: 1f4b3af275bf385f2180286c3b90faf8 (MD5) Made available in DSpace on 2010-06-07T08:03:25Z (GMT). No. of bitstreams: 1 应杰--硕士毕业论文.pdf: 1592507 bytes, checksum: 1f4b3af275bf385f2180286c3b90faf8 (MD5) Previous issue date: 2010 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
应杰.立方氮化硼薄膜的原位Si 掺杂研究[硕士].北京.中国科学院研究生院.2010 |
| Palavras-Chave | #半导体材料 |
| Tipo |
学位论文 |
