EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS
Data(s) |
1994
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Resumo |
In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
LI LQ; PAN GQ; DIAO HW; LIAO XB; YOU ZP.EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS,SOLAR ENERGY MATERIALS AND SOLAR CELLS,1994,34(0):571-575 |
Palavras-Chave | #半导体器件 #AMORPHOUS-SILICON |
Tipo |
期刊论文 |