A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

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This work was supported by the National Natural Science Foundation of China (10874001, 50732001, 10674012, and 60877022) and by the National Basic Research Program of China (973 Program, 2007CB613402).

国内

This work was supported by the National Natural Science Foundation of China (10874001, 50732001, 10674012, and 60877022) and by the National Basic Research Program of China (973 Program, 2007CB613402).