1.3-1.55 m GaInNAs 多量子阱共振腔增强型探测器

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.55μm 波段InAs 自组织量子分子束外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.55 μm GaInNAs(Sb)、异变InGaAs 量子阱材料与激光器

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

1.3-1.55 微米 GaInNAs(Sb)/GaAs 量子阱生长与激光器制备研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP基1.55μm波长高性能波导探测器研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.55 微米异变InGaAs高性能探测器的研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T06:25:37Z No. of bitstreams: 1 朱彬：异变1.55微米InGaAs高性能探测器的研究.pdf: 2216549 bytes, checksum: fa478c11726e2e9949d3ef39dfb34370 (MD5)

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

制作用于1.55微米通信波段硅波导光电转换器的方法

本发明公开了一种制作用于1.55微米通信波段的硅波导光电转换器的方法，包括:在SOI的顶层硅上刻蚀出直波导和环形波导，使二者相切或保持一定的耦合关系;在环形波导两侧分别注入或扩散V族和III族离子并退火，形成波导侧壁连续的n型和p型掺杂区，在环形波导表层构造横向p-i-n结构，并控制本征区i的宽度;向环形波导表面的本征区i内注入硅离子、银离子或氢离子，并退火，形成深能级缺陷;在n型和p型掺杂区表面、以及SOI材料背面分别蒸发金属电极，形成非带隙吸收、深能级电荷遂穿、波长可调的硅波导光电转换器。利用本发明，使硅波导p-i-n横向结构对1.55微米波段能够进行探测，并利用热效应来调节转换波长。

Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 A/cm(2) at room temperature under continuous-wave operation.

High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs

In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20 degrees C to 60 degrees C. The highest output power of 0.435mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.

Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers

We present the fabrication of 1.3 mu m waveband p-doped InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with an extremely simple process. The continuous-wave saturated output power of 1.1 mW with a lasing wavelength of 1280 nm is obtained at room temperature. The high-speed modulation characteristics of p-doped QD VCSELs of two different oxide aperture sizes are investigated and compared. The maximum 3 dB modulation bandwidth of 2.5 GHz can be achieved at a bias current of 7 mA for a p-doped QD VCSEL with an oxide aperture size of 10 mu m in the small signal frequency response measurements. The crucial factors for the 3 dB bandwidth limitation are discussed according to the parameters' extraction from frequency response.

Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers

We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers. The maximum modal gain of the QD laser with five stacks of QDs is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. The expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. We theoretically calculated the maximum modal gain of the QD lasers and the result is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m InAs/GaAs QD lasers in optical communications systems.

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy

We report a 1.5-mu m InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150 K, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current density is 667 A/cm(2) under pulsed operation. The pulsed lasers can operate up to 286 K.