GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长


Autoria(s): 张石勇
Contribuinte(s)

牛智川

Data(s)

2006

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:23Z (GMT). No. of bitstreams: 1 disk/eh2006/zsy.pdf: 1803869 bytes, checksum: 7cb708d78760e7c50fdd535021c2a953 (MD5) Previous issue date: 2006

Identificador

http://ir.semi.ac.cn/handle/172111/5553

http://www.irgrid.ac.cn/handle/1471x/60338

Idioma(s)

中文

Fonte

张石勇.GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长.[博士].北京.中国科学院半导体研究所.2006

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文