Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy

We report a 1.5-mu m InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150 K, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current density is 667 A/cm(2) under pulsed operation. The pulsed lasers can operate up to 286 K.

National Natural Science Foundation of China 60607016 60625405National Basic Research Programme of China National High Technology Research and Development Programme of China Supported partly by the National Natural Science Foundation of China under Grand Nos 60607016 and 60625405, the National Basic Research Programme of China and the National High Technology Research and Development Programme of China.