Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes
| Data(s) |
2008
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|---|---|
| Resumo |
Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 A/cm(2) at room temperature under continuous-wave operation. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wu, D ; Wang, H ; Wu, B ; Ni, H ; Huang, S ; Xiong, Y ; Wang, P ; Han, Q ; Niu, Z ; Tangring, I ; Wang, SM .Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes ,ELECTRONICS LETTERS,2008 ,44(7): 474-U6 |
| Palavras-Chave | #半导体器件 #CONTINUOUS-WAVE OPERATION #1.3-MU-M |
| Tipo |
期刊论文 |
