1.3-1.55 微米 GaInNAs(Sb)/GaAs 量子阱生长与激光器制备研究
| Contribuinte(s) |
牛智川 王庶民 |
|---|---|
| Data(s) |
2009
|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:37:15Z (GMT). No. of bitstreams: 1 disk/eh2009/zh.pdf: 3279702 bytes, checksum: cfde4455a71a0acc5db58af07bf0c829 (MD5) Previous issue date: 2009 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
赵欢.1.3-1.55 微米 GaInNAs(Sb)/GaAs 量子阱生长与激光器制备研究.[博士].北京.中国科学院半导体研究所.2009 |
| Palavras-Chave | #微电子学与固体电子学 |
| Tipo |
学位论文 |
